Datasheet Details
| Part number | IRLML6401 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 196.23 KB |
| Description | Power MOSFET |
| Datasheet | IRLML6401_InternationalRectifier.pdf |
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Overview: l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (<1.1mm) G1 l Available in Tape and Reel l Fast Switching l 1.
| Part number | IRLML6401 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 196.23 KB |
| Description | Power MOSFET |
| Datasheet | IRLML6401_InternationalRectifier.pdf |
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These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint.
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|---|---|---|---|
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| Part Number | Description |
|---|---|
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| IRLML6246TRPbF | Power MOSFET |
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