IRLML6401 Datasheet | International Rectifier

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. IRLML6401Pb F HEXFET® Power MOSFET VDSS = -12V 3D RDS(on) = 0.05Ω Micro3™ Base Part Number Package Type Standard Pack Form Quantity Orderable Part Number IRLML6401TRPb F Micro3™ (SOT-23) Tape and Reel Absolute Maximum Ratings VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy- Gate-to-Source Voltage Junction and Storage Temperature Range IRLML6401TRPb F Max. -12 -4.3 -3.4 -34 1.3 0.8 0.01 33 ± 8.0 -55 to + 150 Units V W W/°C m J V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient- Typ. 75 Max. 100 Units °C/W .irf. © 2014 International Rectifier Submit Datasheet Feedback April 28, 2014 IRLML6401Pb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on)...