Datasheet Details
| Part number | IRLML6401TR |
|---|---|
| Manufacturer | UMW |
| File Size | 769.45 KB |
| Description | -12V P-ChanneI MOSFET |
| Datasheet | IRLML6401TR-UMW.pdf |
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Overview: UMW IRLML6401TR -12V P-ChanneI MOSFET 1.1.
| Part number | IRLML6401TR |
|---|---|
| Manufacturer | UMW |
| File Size | 769.45 KB |
| Description | -12V P-ChanneI MOSFET |
| Datasheet | IRLML6401TR-UMW.pdf |
|
|
|
SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 D G S 3.Maximum ratings (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=4.5V Continuous Drain Current, VGS=4.5V Pulsed Drain Current a Power Dissipation Power Dissipation Single Pulse Avalanche Energy b TA=25°C TA=70°C TA=25°C TA=70°C Symbol VDS VGS ID IDM PD EAS Value -12 ±8 -4.3 -3.4 -34 1.3 0.8 33 Units V A W mJ UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024 1 of 10 .umw-ic.
UMW IRLML6401TR -20V P-ChanneI MOSFET Thermal Resistance.Junction- to-Ambient Linera Derating Factor Junction Temperature Junction and Storage Temperature Range Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature.
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