IRLML6401TR
IRLML6401TR is -12V P-ChanneI MOSFET manufactured by UMW.
Description
SOT-23
GATE
SOURCE
DRAIN
1 2
3.Maximum ratings (TA=25°C unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS=4.5V Continuous Drain Current, VGS=4.5V Pulsed Drain Current a Power Dissipation Power Dissipation Single Pulse Avalanche Energy b
TA=25°C TA=70°C
TA=25°C TA=70°C
Symbol VDS VGS ID IDM PD EAS
Value -12 ±8 -4.3 -3.4 -34 1.3 0.8 33
Units V
W m J
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
1 of 10
.umw-ic.
UMW IRLML6401TR
-20V P-Channe I MOSFET
Thermal Resistance.Junction- to-Ambient Linera Derating Factor Junction Temperature Junction and Storage Temperature Range
Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature. b.Starting TJ=25°C, L=3.5m H, RG=25Ω, IAS=-4.3A.
Rth JA
TJ TSTG
100 0.01 150 -55 to 150
°C/W W/°C
°C
2 of 10
UTD Semiconductor Co.,Limited Nov.2024
.umw-ic.
UMW IRLML6401TR
-20V P-Channe I MOSFET
4.Electrical Characteristics TA=25°C
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain...
