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IRLML6401 - P-Channel Enhancement MOSFET

Key Features

  • s.
  • Ultra low on-resistance.
  • P-Channel MOSFET.
  • Fast switching. +0.12.4 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 - 0.1 +0.10.97 -0.1 +1.3 0.1 - 0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22.. ESmiotutrecre 33.. cDolraleicntor.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=4.5V @ TA=25℃ Continuous Drain Current VGS=4.5V@ TA=70℃ Pulsed Drain C.

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SMD Type P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) MOSFET ■ Features ● Ultra low on-resistance. ● P-Channel MOSFET. ● Fast switching. +0.12.4 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 - 0.1 +0.10.97 -0.1 +1.3 0.1 - 0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolraleicntor ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=4.5V @ TA=25℃ Continuous Drain Current VGS=4.5V@ TA=70℃ Pulsed Drain Current a Power Dissipation @ TA=25℃ Power Dissipation @ TA=70℃ Single Pulse Avalanche Energy b Thermal Resistance.