Kexin Electronics IRLML6401
P-Channel Enhancement MOSFET
| Part No. | IRLML6401 |
|---|---|
| Datasheet | IRLML6401 Download |
| Manufacturer | Kexin Electronics |
| Description | P-Channel Enhancement MOSFET |
| Buy | Stock & Price |
FEATURES
● Ultra low on-resistance.● P-Channel MOSFET.
● Fast switching. +0.12.4 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 0-0.1 +0.10.38 - 0.1 +0.10.97 -0.1 +1.3 0.1 - 0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 11.. BGasaete 22..ESmiotutrecre 33..cDolraleicntor
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ABSOLUTE MAXIMUM RATINGS
Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS=4.5V @ TA=25℃ Continuous Drain Current VGS=4.5V@ TA=70℃ Pulsed Drain Current a Power Dissipation @ TA=25℃ Power Dissipation @ TA=70℃ Single Pulse Avalanche Energy b Thermal Resistance.Junction- to-Ambient Linera Derating Factor Junction Temperature Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD EAS RthJA TJ Tstg Rating -12 ±8 -4.3 -3.4 -34 1.3 0.8 33 100 0.01 150 -55 to 150 Notes: a.Repetitive Rating :Pulse width limited by maximum junction temperature b
