IRLZ34NLPBF Description
HEXFET Power MOSFET D IRLZ34NSPbF IRLZ34NLPbF ® VDSS = 55V RDS(on) = 0.035Ω PD - 95583 G ID = 30A S Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized...
IRLZ34NLPBF Key Features
- l Logic-Level Gate Drive Advanced Process Technology
- Surface Mount (IRLZ34NS)
- Low-profile through-hole (IRLZ34NL)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated