IRLZ34NLPBF Datasheet | International Rectifier

Description HEXFET Power MOSFET IRLZ34NSPb F IRLZ34NLPb F ® VDSS = 55V RDS(on) = 0.035Ω - 95583 ID = 30A Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ34NL) is available for lowprofile applications. D 2 Pak TO-262 Parameter Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt - … Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 30 21 110 3.8 68 0.45 ±16 110 16 6.8 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/°C V m J A m J V/ns °C ta S hee t4U .co Thermal Resistance Parameter Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)- - m Typ. ––– ––– Max. 2.2 40 Units °C/W RθJC RθJA w.D a .irf. 07/20/04 ww .. IRLZ34NS/LPb F Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on)...