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IRLZ44Z - AUTOMOTIVE MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 13.5mΩ ID = 51A.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLZ44ZL AUTOMOTIVE MOSFET
IRLZ44ZLPBF AUTOMOTIVE MOSFET
IRLZ44ZPBF AUTOMOTIVE MOSFET
IRLZ44ZS AUTOMOTIVE MOSFET
IRLZ44ZSPBF AUTOMOTIVE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 95849 AUTOMOTIVE MOSFET IRLZ44Z IRLZ44ZS IRLZ44ZL HEXFET® Power MOSFET D Features ● ● ● ● ● ● Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 13.5mΩ ID = 51A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.