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IRLZ44ZLPBF - AUTOMOTIVE MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l l l l l l l IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF HEXFET® Power MOSFET D Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 13.5mΩ G S.

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Other Datasheets by International Rectifier (now Infineon)

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IRLZ44ZL AUTOMOTIVE MOSFET
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IRLZ44ZSPBF AUTOMOTIVE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD - 95539 AUTOMOTIVE MOSFET Features l l l l l l l IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF HEXFET® Power MOSFET D Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 13.5mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .