IRLZ44ZSPBF Datasheet | International Rectifier

Features l l l l l l l IRLZ44ZPb F IRLZ44ZSPb F IRLZ44ZLPb F HEXFET® Power MOSFET Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 13.5mΩ Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. ID = 51A TO-220AB IRLZ44Z D2Pak IRLZ44ZS Max. 51 36 204 80 0.53 ± 16 78 110 See Fig.12a, 12b, 15, 16 -55 to + 175 TO-262 IRLZ44ZL Units A W W/°C V m J A m J °C Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V Pulsed Drain Current ™ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy d Ù h g Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA i 300 (1.6mm from case ) 10 lbf in (1.1N m) y y Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB Mount) k Parameter Typ. Max. - - - 62 40 Units °C/W ik ik - - - 0.50 -...