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IRLZ44ZSPBF - AUTOMOTIVE MOSFET

Download the IRLZ44ZSPBF datasheet PDF. This datasheet also covers the IRLZ44ZLPBF variant, as both devices belong to the same automotive mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l l l l l l l IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF HEXFET® Power MOSFET D Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 13.5mΩ G S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLZ44ZLPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRLZ44ZS N-Channel MOSFET INCHANGE
IRLZ44Z N-Channel MOSFET INCHANGE
IRLZ44 N-Channel MOSFET Samsung semiconductor
IRLZ44 Power MOSFET Vishay
IRLZ44A ADVANCED POWER MOSFET Samsung semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLZ44ZS AUTOMOTIVE MOSFET
IRLZ44Z AUTOMOTIVE MOSFET
IRLZ44ZL AUTOMOTIVE MOSFET
IRLZ44ZLPBF AUTOMOTIVE MOSFET
IRLZ44ZPBF AUTOMOTIVE MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 95539 AUTOMOTIVE MOSFET Features l l l l l l l IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF HEXFET® Power MOSFET D Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free VDSS = 55V RDS(on) = 13.5mΩ G S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .