Si4420DYPbF Datasheet | International Rectifier

- 95729 Si4420DYPbF l N-Channel MOSFET l Low On-Resistance l Low Gate Charge l Surface Mount l Logic Level Drive l Lead-Free Description This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. HEXFET® Power MOSFET AA 1 8D 2 7D 3 6D 4 5D Top View VDSS = 30V RDS(on) = 0.009Ω SO-8 Absolute...