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SI4420DY - N-channel FET

General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: Si4420DY in SOT96-1 (SO8).

2.

Key Features

  • s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si4420DY N-channel enhancement mode field-effect transistor M3D315 Rev. 01 — 28 May 2001 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: Si4420DY in SOT96-1 (SO8). 2. Features s Low on-state resistance s Fast switching s TrenchMOS™ technology. 3. Applications s s s s s DC to DC convertors DC motor control Lithium-ion battery applications Notebook PC Portable equipment applications. c c 4. Pinning information Table 1: Pin 1,2,3 4 5,6,7,8 Pinning - SOT96-1, simplified outline and symbol Description source (s) 8 5 d Simplified outline Symbol gate (g) drain (d) 1 Top view 4 MBK187 g s MBB076 SOT96-1 (SO8) 1. TrenchMOS is a trademark of Royal Philips Electronics.