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N-Channel 30-V (D-S) MOSFET
Si4420BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.0085 at VGS = 10 V
0.0110 at VGS = 4.5 V
ID (A) 13.5 11
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • 100 % Rg Tested
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
Ordering Information: Si4420BDY-T1-E3 (Lead (Pb)-free) Si4420BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
13.5
9.5
10.8
7.5
Pulsed Drain Current
IDM
50
A
Continuous Source Current (Diode Conduction)a
IS
2.3
1.
Si4420BDY Datasheet
