AUIRF2804
Overview
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
- AUIRF2804 AUIRF2804S AUIRF2804L 40V max. 2.0mΩk 1.5mΩk 270A c
