IRF6648 Description
The IRF6648 bines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note...
IRF6648 Key Features
- RoHs pliant Containing No Lead and Bromide
- Low Profile (<0.7 mm)
- Dual Sided Cooling patible
- Ultra Low Package Inductance
- Optimized for High Frequency Switching
- Optimized for Synchronous Rectification for 5V to 12V outputs
- Ideal for 24V input Primary Side Forward Converters
- Low Conduction Losses