IRF7488 Description
PD - 94507 IRF7488 Applications l High frequency DC-DC converters HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. 20 50 Units °C/W 1 9/23/02 IRF7488 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions V(BR)DSS...
IRF7488 Key Features
- High frequency DC-DC converters HEXFET® Power MOSFET VDSS 80V RDS(on) max 29mW@VGS=10V Qg 38nC Benefits
- Low Gate-to-Drain Charge to Reduce Switching Losses
- Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) S S S
- Fully Characterized Avalanche Voltage G and Current 18 27 36 45 Top View AA D D D D SO-8