• Part: ACS10MS
  • Description: Radiation Hardened Triple Three-Input NAND Gate
  • Manufacturer: Intersil
  • Size: 106.23 KB
Download ACS10MS Datasheet PDF
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Datasheet Summary

April 1995 Radiation Hardened Triple Three-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 A2 3 B2 4 14 VCC 13 C1 12 Y1 11 C3 10 B3 9 A3 8 Y3 Features - 1.25 Micron Radiation Hardened SOS CMOS - Total Dose 300K RAD (Si) - Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) - SEU LET Threshold >80 - Dose Rate Upset >1011 MEV-cm2 /mg RAD (Si)/s, 20ns Pulse -55oC +125oC - Latch-Up Free Under Any Conditions - Military Temperature Range: to C2 5 Y2 6 GND 7 - Significant Power Reduction pared to ALSTTL Logic - DC Operating Voltage Range: 4.5V to 5.5V - Input Logic Levels - VIL = 30% of VCC Max...