ACS11MS Datasheet | Intersil

Features - QML Qualified Per MIL-PRF-38535 Requirements - 1.25 Micron Radiation Hardened SOS CMOS - Radiation Environment - Latch-Up Free Under any Conditions - Total Dose- - - - . . 3 x 105 RAD (Si) - SEU Immunity - - . . . <1 x 10-10 Errors/Bit/Day - SEU LET Threshold - - . . >100Me V/(mg/cm2) - Input Logic Levels . . . . VIL = (0.3)(VCC), VIH = (0.7)(VCC) - Output Current - - - - . . . . ±8m A (Min) - Quiescent Supply Current - - . . . . 100µA (Max) - Propagation Delay - - - - . . 12ns (Max) Applications - High Speed Control Circuits - Sensor Monitoring - Low Power Designs Ordering Information ORDERING NUMBER 5962F9862201VCC ACS11D/SAMPLE-03 5962F9862201VXC ACS11K/SAMPLE-03 5962F9862201V9A INTERNAL MKT. NUMBER ACS11DMSR-03 ACS11D/SAMPLE-03 ACS11KMSR-03 ACS11K/SAMPLE-03 ACS11HMSR-03 TEMP. RANGE (o C) -55 to 125 25 -55 to 125 25 25 PACKAGE 14 Ld SBDIP 14 Ld SBDIP 14 Ld Flatpack 14 Ld Flatpack Die DESIGNATOR CDIP2-T14 CDIP2-T14 CDFP4-F14 CDFP4-F14 N/A Pinouts ACS11MS (SBDIP) TOP VIEW A1 B1 A2 A2 3 B2 4 C2 5 Y2 6 GND 7 12 Y1 11 C3 10 B3 9 A3 8 Y3 B2 C2 Y2 GND ACS11MS (FLATPACK) TOP VIEW 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC C1 Y1 C3 B3 A3 Y3 A1 1 B1 2 14 VCC 13 C1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 ACS11MS Die Characteristics DIE DIMENSIONS: Size: 2390µm x 2390µm (94 mils x 94 mils) Thickness: 525µm ±25µm (20.6 mils 1 mil) Bond Pad: 110µm x 110µm (4.3 x 4.3 mils) METALLIZATION: AI Metal 1 Thickness: 0.7µm ±0.1µm Metal 2 Thickness: 1.0µm ±0.1µm SUBSTRATE POTENTIAL Unbiased Insulator PASSIVATION: Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ±0.15µm SPECIAL...