FSS430D Datasheet – N-Channel Power MOSFETs

Manufacturer: Intersil (now Renesas)

Intersil (now Renesas)

Datasheet Details

Part number	FSS430D
Manufacturer	Intersil (now Renesas)
File Size	43.66 KB
Description	N-Channel Power MOSFETs
Datasheet	FSS430D Datasheet

General Description

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space ap

Overview

FSS430D, FSS430R June 1998 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power.

Key Features

3A, 500V, rDS(ON) = 2.70Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 8.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Speci.

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