The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space ap
Overview
FSS430D, FSS430R June 1998 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power.
Key Features
3A, 500V, rDS(ON) = 2.70Ω.
Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si).
Single Event
- Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.