FSS430R Datasheet | Intersil

FSS430D, FSS430R June 1998 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features - 3A, 500V, r DS(ON) = 2.70Ω - Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36Me V/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias - Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM - Photo Current - 8.0n A Per-RAD(Si)/s Typically - Neutron - Maintain Pre-RAD Specifications for 3E12 Neutrons/cm2 - Usable to 3E13 Neutrons/cm2 Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K mercial FSS430D1 10K TXV FSS430D3 100K 100K mercial TXV FSS430R1 FSS430R3 100K Space FSS430R4 Description...