FSYA9150D - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs

Product Overview

Intersil Corporation

Part number	FSYA9150D
Manufacturer	Intersil Corporation
File Size	56.18 KB
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Datasheet	FSYA9150D Datasheet
Additional preview pages of the FSYA9150D datasheet.

24A, -100V, rDS(ON) = 0.140Ω.
Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si).
Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias.
Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
Photo Current - 7.0nA Per-RAD(Si)/s Typically.
Neutron - Maintain Pre-RAD Sp.

📁 Similar Datasheet

Other Datasheets by Intersil Corporation

FSYA9150R - Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
FSYA150D - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYA150R - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
FSYA250D - 27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSYA250R - 27A/ 200V/ 0.100 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
FSYA254D - Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs

Published: Mar 23, 2005 |