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HCS74T - Radiation Hardened Dual-D Flip-Flop

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • QML Class T, Per MIL-PRF-38535.
  • Radiation Performance - Gamma Dose (γ) 1 x 105 RAD(Si) - Latch-Up Free Under Any Conditions, SOS Process - SEP Effective LET No Upsets: >100 MEV-cm2/mg - Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
  • 3 Micron Radiation Hardened SOS CMOS.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC Operating Voltage Range: 4.5V to 5.5V.
  • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC M.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
HCS74MS Radiation Hardened Dual-D Flip-Flop
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HCS74T Data Sheet July 1999 File Number 4615.1 Radiation Hardened Dual-D Flip-Flop with Set and Reset Intersil’s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard flow intended to meet the cost and shorter lead-time needs of large volume satellite manufacturers, while maintaining a high level of reliability. The Intersil HCS74T is a Radiation Hardened Positive Edge Triggered Flip-Flop with set and reset. The HCS74T utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family.