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HCTS10MS Datasheet Radiation Hardened Triple 3-input Nand Gate

Manufacturer: Intersil (now Renesas)

Overview: HCTS10MS September 1995 Radiation Hardened Triple 3-Input NAND Gate Pinouts 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 A2 3 B2 4 C2 5 Y2 6 GND 7 14.

General Description

The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate.

A high on all inputs forces the output to a Low state.

The HCTS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K RAD (Si).
  • SEP Effective LET No Upsets: >100 MEV-cm2/mg.
  • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
  • Dose Rate Survivability: >1 x.
  • Dose Rate Upset >10 10 1012 RAD (Si)/s RAD (Si)/s 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55oC to +125oC.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC O.

More Datasheets from Intersil (now Renesas)

Part Number Description
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HCTS10MS Distributor