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HCTS10MS - Radiation Hardened Triple 3-Input NAND Gate

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Intersil Corporation

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HCTS10MS Radiation Hardened Triple 3-Input NAND Gate by Intersil Corporation - Datasheet Preview — Datasheet preview – HCTS10MS

Datasheet Details

Part number	HCTS10MS
Manufacturer	Intersil Corporation
File Size	147.99 KB
Description	Radiation Hardened Triple 3-Input NAND Gate
Datasheet	HCTS10MS Datasheet
Additional preview pages of the HCTS10MS datasheet.

Product details

Description

The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate.

Features

3 Micron Radiation Hardened SOS CMOS.
Total Dose 200K RAD (Si).
SEP Effective LET No Upsets: >100 MEV-cm2/mg.
Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ).
Dose Rate Survivability: >1 x.
Dose Rate Upset >10 10 1012 RAD (Si)/s RAD (Si)/s 20ns Pulse.
Latch-Up Free Under Any Conditions.
Military Temperature Range: -55oC to +125oC.
Signiﬁcant Power Reduction Compared to LSTTL ICs.
DC O.

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Published: Mar 23, 2005 |