HCTS10MS Description
The Intersil HCTS10MS is a Radiation Hardened Triple 3-Input NAND Gate. A high on all inputs forces the output to a Low state. The HCTS10MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.
HCTS10MS Key Features
- 3 Micron Radiation Hardened SOS CMOS
- Total Dose 200K RAD (Si)
- SEP Effective LET No Upsets: >100 MEV-cm2/mg
- Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ)
- Dose Rate Survivability: >1 x
- Dose Rate Upset >10
- Latch-Up Free Under Any Conditions
- Military Temperature Range: -55oC to +125oC
- Significant Power Reduction pared to LSTTL ICs
- DC Operating Voltage Range: 4.5V to 5.5V