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HCTS11MS - Radiation Hardened Triple 3-Input AND Gate

General Description

The Intersil HCTS11MS is a Radiation Hardened Triple 3Input AND Gate.

A high on all inputs forces the output to a High state.

The HCTS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation.

Key Features

  • 3 Micron Radiation Hardened SOS CMOS.
  • Total Dose 200K or 1 Mega-RAD (Si).
  • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse.
  • Latch-Up Free Under Any Conditions.
  • Military Temperature Range: -55 C to +125 C.
  • Significant Power Reduction Compared to LSTTL ICs.
  • DC Operating Voltage Range: 4.5V to 5.5V.
  • LSTTL Input Compatibility - VIL = 0.8V Max. - VIH = VCC/2 Min.
  • Input Current Levels Ii ≤ 5µA at VOL, VOH o o B1 2 A2 3 B2 4 C2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HCTS11MS November 1994 Radiation Hardened Triple 3-Input AND Gate Pinouts 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 14 VCC 13 C1 12 Y1 11 C3 10 B3 9 A3 8 Y3 Features • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K or 1 Mega-RAD (Si) • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55 C to +125 C • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.8V Max. - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5µA at VOL, VOH o o B1 2 A2 3 B2 4 C2 5 Y2 6 GND 7 Description The Intersil HCTS11MS is a Radiation Hardened Triple 3Input AND Gate. A high on all inputs forces the output to a High state.