HGTG20N120C3D Datasheet N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTG20N120C3D Data Sheet October 1998 File Number 4508.1 45A, 1200V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N120C3D is a MOS gated high voltage switching device combining the.

Datasheet Details

Part number	HGTG20N120C3D
Manufacturer	Intersil (now Renesas)
File Size	97.79 KB
Description	N-Channel IGBT
Datasheet	HGTG20N120C3D_IntersilCorporation.pdf

Key Features

of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching.

HGTG20N120C3D Distributor

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