HGTG20N120E2 Overview
The HGTG20N120E2 is a MOS gated, high voltage switching device bining the best.
HGTG20N120E2 Key Features
- 34A, 1200V
- Latch Free Operation
- Typical Fall Time
- High Input Impedance
- Low Conduction Loss
| Part number | HGTG20N120E2 |
|---|---|
| Datasheet | HGTG20N120E2_IntersilCorporation.pdf |
| File Size | 167.55 KB |
| Manufacturer | Intersil (now Renesas) |
| Description | N-Channel IGBT |
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The HGTG20N120E2 is a MOS gated, high voltage switching device bining the best.
See all Intersil (now Renesas) datasheets
| Part Number | Description |
|---|---|
| HGTG20N120 | N-Channel IGBT |
| HGTG20N120C3D | N-Channel IGBT |
| HGTG20N120CN | N-Channel IGBT |
| HGTG20N120CND | N-Channel IGBT |
| HGTG20N100D2 | N-Channel IGBT |
| HGTG20N50C1D | N-Channel IGBT |
| HGTG20N60A4 | N-Channel IGBT |
| HGTG20N60B3 | N-Channel IGBT |
| HGTG20N60B3D | N-Channel IGBT |
| HGTG20N60C3 | N-Channel IGBT |