Datasheet Details
| Part number | HGTP10N40E1 |
|---|---|
| Manufacturer | Intersil (now Renesas) |
| File Size | 38.89 KB |
| Description | N-Channel IGBT |
| Datasheet |
 HGTP10N40E1 Datasheet
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General Description
The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers.
Key Features
- 10A and 12A, 400V and 500V.
- VCE(ON): 2.5V Max.
- TFI: 1µs, 0.5µs.
- Low On-State Voltage.
- Fast Switching Speeds.
- High Input Impedance.
- No Anti-Parallel Diode.