HGTP10N40E1D
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers. They feature a discrete anti-parallel diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region.
Key Features
- 10A, 400V and 500V
- VCE(ON): 2.5V Max
- TFALL: 1µs, 0.5µs
- Low On-State Voltage
- Fast Switching Speeds
- High Input Impedance
- Anti-Parallel Diode
