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HGTP10N40E1D - N-Channel IGBT

General Description

The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.

Key Features

  • 10A, 400V and 500V.
  • VCE(ON): 2.5V Max.
  • TFALL: 1µs, 0.5µs.
  • Low On-State Voltage.
  • Fast Switching Speeds.
  • High Input Impedance.
  • Anti-Parallel Diode.

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HGTP10N40E1 N-Channel IGBT
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR (FLANGE) Features • 10A, 400V and 500V • VCE(ON): 2.5V Max. • TFALL: 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • Anti-Parallel Diode Applications • Power Supplies • Motor Drives • Protective Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching regulators and motor drivers.