HGTP10N40F1D
Description
The IGBT is a MOS gated high voltage switching device bining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
Key Features
- 10A, 400V and 500V
- Latch Free Operation
- Typical Fall Time < 1.4µs
- High Input Impedance
- Low Conduction Loss
- Anti-Parallel Diode
