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HGTP10N40F1D Datasheet N-channel IGBT

Manufacturer: Intersil (now Renesas)

Overview: HGTP10N40F1D, HGTP10N50F1D April 1995 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Package JEDEC TO-220AB EMITTER COLLECTOR GATE COLLECTOR.

General Description

The IGBT is a MOS gated high voltage switching device bining the best

Key Features

  • 10A, 400V and 500V.
  • Latch Free Operation.
  • Typical Fall Time < 1.4µs.
  • High Input Impedance.
  • Low Conduction Loss.
  • Anti-Parallel Diode.
  • tRR < 60ns.

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