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IRFF9120 - P-Channel Power MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • 4A, 100V.
  • rDS(ON) = 0.60Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance Ordering Information PART NUMBER IRFF9120 NOTE:.

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Other Datasheets by Intersil (now Renesas)

Part Number Description
IRFF9130 P-Channel Power MOSFET
IRFF9220 P-Channel Power MOSFET
IRFF9230 P-Channel Power MOSFET
IRFF110 N-Channel Power MOSFET
IRFF120 N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IRFF9120 Data Sheet June 1999 File Number 2287.2 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17501. Features • 4A, 100V • rDS(ON) = 0.