IRFF9120 Overview
IRFF9120 Data Sheet June 1999 File Number 2287.2 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly...
IRFF9120 Key Features
- 4A, 100V
- rDS(ON) = 0.60Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power-Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance