Description
The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ .
Features
- 8A, 100V, rDS(ON) = 0.180Ω.
- Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
- Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
- Photo Current - 1.5nA Per-RAD(Si)/s Typically.
- Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2
Ordering Information
PART NUMBER JANSR2N7272.
JANSR2N7272 Datasheet
