Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ .
Features
- 5A, 200V, rDS(ON) = 0.500Ω.
- Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
- Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM.
- Photo Current - 3nA Per-RAD(Si)/s Typically.
- Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2
Ordering Information
PART NUMBER JANSR2N7275.
JANSR2N7275 Datasheet
