JANSR2N7278
Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.
Key Features
- 4A, 250V, rDS(ON) = 0.700Ω
- Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
- Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
- Photo Current - 4nA Per-RAD(Si)/s Typically
