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RF1S45N06SM Datasheet 45A/ 60V/ 0.028 Ohm/ N-Channel Power MOSFETs

Manufacturer: Intersil (now Renesas)

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Overview

RFG45N06, RFP45N06, RF1S45N06SM Data Sheet July 1999 File Number 3574.4 45A, 60V, 0.028 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Key Features

  • 45A, 60V.
  • rDS(ON) = 0.028Ω.
  • Temperature Compensating PSPICE® Model.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • 175oC Operating Temperature.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol DRAIN Ordering Information PART NUMBER RFG45N06 RFP45N06 RF1S45N06SM.

📁 Similar Datasheet

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Fairchild Semiconductor Logo RF1S45N06SM 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor
Fairchild Semiconductor Logo RF1S45N06 45A/ 60V/ Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Fairchild Semiconductor

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