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RFL2N05 Datasheet N-Channel Power MOSFET

Manufacturer: Intersil (now Renesas)

Overview: Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated circuits.

Formerly developmental type TA09378.

Key Features

  • 2A, 50V and 60V.
  • rDS(ON) = 0.95Ω.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFL2N05 RFL2N05.