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RFL2N06 - N-Channel Power MOSFET

Description

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Features

  • 2A, 50V and 60V.
  • rDS(ON) = 0.95Ω.
  • SOA is Power-Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information G PART NUMBER RFL2N05 RFL2N05.

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Datasheet Details

Part number RFL2N06
Manufacturer Intersil
File Size 44.98 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RFL2N06 Datasheet
Additional preview pages of the RFL2N06 datasheet.

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Full PDF Text Transcription

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Semiconductor RFL2N05, RFL2N06 2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09378. January 1998 Features • 2A, 50V and 60V • rDS(ON) = 0.
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