Datasheet4U Logo Datasheet4U.com

RFL2N06L - N-Channel Power MOSFET

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • 2A, 50V and 60V.
  • rDS(ON) = 0.950Ω.
  • Design Optimized for 5V Gate Drives.
  • Can be Driven from QMOS, NMOS, TTL Circuits.
  • Compatible with Automotive Drive Requirements.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics Ordering Information PART NUMBER RFL2N06L.

📥 Download Datasheet

Datasheet preview – RFL2N06L

Datasheet Details

Part number RFL2N06L
Manufacturer Intersil
File Size 306.93 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RFL2N06L Datasheet
Additional preview pages of the RFL2N06L datasheet.

📁 Similar Datasheet

  • RFLA1010 - HIGH-LINEARITY AMPLIFIER (RF Micro Devices)
  • RFLA1018 - VARIABLE GAIN LOW NOISE HIGH LINEARITY AMPLIFIER (RFMD)
  • RFLA1018S - High Linearity Amplifier (RF Micro Devices)
  • RFLA1022 - High Linearity Amplifier (RF Micro Devices)
  • RFLA1038 - Variable Gain Low Noise High Linearity Amplifier (RF Micro Devices)
  • RFLA2018 - Variable Gain Low Noise High Linearity Amplifier (RFMD)
  • RFLA9002 - Dual Low Noise Amplifier (RF Micro Devices)
  • RFLA9003 - Dual Low Noise Amplifier (RF Micro Devices)
  • RFLW3N1100B - High Frequency Wire Bondable RF Spiral Inductor (Vishay)
  • RFLW3N2000B - High Frequency Wire Bondable RF Spiral Inductor (Vishay)
Other Datasheets by Intersil Corporation

Full PDF Text Transcription

Click to expand full text
RFL2N06L Data Sheet October 1999 File Number 1560.3 2A, 60V, 0.950 Ohm, Logic Level, N-Channel Power MOSFET The RFL2N06L N-channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9520. Features • 2A, 50V and 60V • rDS(ON) = 0.
Published: |