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RFP6P10 - P-Channel MOSFET

General Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Key Features

  • -6A, -80V and -100V.
  • rDS(ON) = 0.600Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device BRAND Ordering Information PART NUMBER RFP6P08 RFP6P10.

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Full PDF Text Transcription for RFP6P10 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RFP6P10. For precise diagrams, and layout, please refer to the original PDF.

RFP6P08, RFP6P10 Data Sheet October 1999 File Number 1490.2 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate powe...

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l Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. Formerly developmental type TA09046. Features • -6A, -80V and -100V • rDS(ON) = 0.

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