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RFP6P10 - P-Channel MOSFET

Datasheet Summary

Description

only.

Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice.

Accordingly, the reader is cautioned to verify that data sheets are current before placing orders.

Features

  • -6A, -80V and -100V.
  • rDS(ON) = 0.600Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device BRAND Ordering Information PART NUMBER RFP6P08 RFP6P10.

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Datasheet Details

Part number RFP6P10
Manufacturer Intersil Corporation
File Size 310.40 KB
Description P-Channel MOSFET
Datasheet download datasheet RFP6P10 Datasheet
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RFP6P08, RFP6P10 Data Sheet October 1999 File Number 1490.2 -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors designed for high speed applications such as switching regulators, switching convertors, relay drivers, and drivers for high power bipolar switching transistors. Formerly developmental type TA09046. Features • -6A, -80V and -100V • rDS(ON) = 0.
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