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IRF830 Datasheet PDF

Intersil IRF830

N-Channel Power MOSFET

Part No. IRF830
Datasheet IRF830 Download
Manufacturer
Intersil
Description N-Channel Power MOSFET
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IRF830 datasheet page 1 preview

FEATURES

● 4.5A, 500V
● rDS(ON) = 1.500Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF830 PACKAGE TO-220AB BRAND IRF830 Symbol D NOTE: When ordering, include the entire part number. G S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-251 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF830

ABSOLUTE MAXIMUM RATINGS

TC = 25oC, Unless Otherwise Specified IRF830 500 500 4.5 3.0 18 ±20 75 0.6 300 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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