Intersil IRF840
8A/ 500V/ 0.850 Ohm/ N-Channel Power MOSFET
FEATURES
● 8A, 500V● rDS(ON) = 0.850Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance
● Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRF840 NOTE: PACKAGE TO-220AB BRAND IRF840 Symbol D When ordering, include the entire part number. G S Packaging JEDEC TO-220AB TOP VIEW SOURCE DRAIN GATE DRAIN (FLANGE) 4-257 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 IRF840
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified IRF840 500 500 8.0 5.1 32 ±20 125 1.0 510 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .