Intersil IRFD9110
P-Channel Power MOSFET
FEATURES
● 0.7A, 100V● rDS(ON) = 1.200Ω
● Single Pulse Avalanche Energy Rated
● SOA is Power Dissipation Limited
● Nanosecond Switching Speeds
● Linear Transfer Characteristics
● High Input Impedance Symbol D Ordering Information PART NUMBER IRFD9110 PACKAGE HEXDIP BRAND IRFD9110 G S NOTE: When ordering, use the entire part number. Packaging HEXDIP DRAIN GATE SOURCE 4-39 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD9110
ABSOLUTE MAXIMUM RATINGS
TC = 25oC, Unless Otherwise Specified IRFD9110 -100 -100 -0.7 -3.0 ±20 1.0 0.008 190 -55 to 150 300 260 UNITS V V A A V W W/oC mJ oC oC oC Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .