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ISL73040SEH Datasheet Radiation Hardened Low-side Gan Fet Driver

Manufacturer: Intersil (now Renesas)

Overview: DATASHEET ISL70040SEH, ISL73040SEH Radiation Hardened Low-Side GaN FET Driver The ISL70040SEH and ISL73040SEH are low-side drivers designed to drive enhancement mode Gallium Nitride (GaN) FETs in isolated topologies and boost type configurations. The drivers operate with a supply voltage from 4.5V to 13.2V and have both inverting (INB) and non-inverting (IN) inputs to satisfy requirements for inverting and non-inverting gate drives with a single device. The ISL70040SEH and ISL73040SEH have a 4.5V gate drive voltage (VDRV) generated using an internal regulator that prevents the gate voltage from exceeding the maximum gate-source rating of enhancement mode GaN FETs.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • an Undervoltage Lockout (UVLO) protection that ignores the inputs (IN/INB) and keeps OUTL turned on to ensure the GaN FET is in an OFF state whenever VDRV is below the UVLO threshold. The ISL70040SEH and ISL73040SEH inputs can withstand voltages up to 14.7V regardless of the VDD voltage. This allows the ISL70040SEH and ISL73040SEH inputs to be connected directly to most PWM controllers. The ISL70040SEH and ISL73040SEH split outputs offer the flexibility to adjust the turn-on and turn-off speed i.

More Datasheets from Intersil (now Renesas)

Part Number Description
ISL73041SEH Radiation Hardened 12V Half-Bridge GaN FET Driver
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ISL73006SLH 1A Point-of-Load Regulator
ISL73007SEH 3A Point-of-Load Regulator
ISL73020SEH 65A Enhancement Mode GaN Power Transistors
ISL73023SEH 60A Enhancement Mode GaN Power Transistor
ISL73024SEH 7.5A Enhancement Mode GaN Power Transistor
ISL73033SLHM Radiation Hardened Driver-GaN Power Stage
ISL73051ASEH Ultra-Low Dropout Regulator

ISL73040SEH Distributor