ISL73041SEH
ISL73041SEH is Radiation Hardened 12V Half-Bridge GaN FET Driver manufactured by Intersil.
Features
- Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU)
- All screening and QCI is in accordance with MIL-PRF-38535L Class-V
- Up to 20V bootstrap voltage half-bridge driver
- Programmable 4.5V to 5.5V gate drive voltage
- Single tri-level PWM input control
- Separate source and sink driver outputs
- High-side peak drive: 2A Sourcing, 4A Sinking
- Low-side peak drive: 4A Sourcing, 8A Sinking
- High and low side programmable dead time control
- Highly matched fast propagation delay: 29ns
- Full military temperature operation TA = -55°C to
125°C ambient range
- TID Rad Hard Assurance (RHA) testing
- LDR (≤ 10mrad(Si)/s): 75krad(Si)
- SEE Characterization (see SEE report for details)
- No DSEE with VDD = 20V or PHS = 13.5V at
LET 86Me V- cm2/mg
- No DSEE with VDD = 20V or PHS = 16.5V at
LET 67Me V- cm2/mg
- SEFI <10µm2 at 86Me V- cm2/mg
- No Half-Bridge Shoot-Through SET at LET
86Me V- cm2/mg
VBUS
VFBVFB+ VREF
DROOP P
2ph PWM Controller ISL73847
FLT PWM1
ISEN1+ ISEN1-
ISEN2+ ISEN2PWM2
SS IMON SLOPE
PWM FLT
Half Bridge Driver
VBUS
PWM FLT
Half Bridge Driver
VOUT
Figure 1. Typical Application Schematic: 2-Phase Controller + Bridge Driver + Ga N FETs for 12V Input, 1.0V Output, 50A DC/DC Converter
R34DS0017EU0104 Rev.1.04 Jan 31, 2025
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