• Part: ISL73041SEH
  • Description: Radiation Hardened 12V Half-Bridge GaN FET Driver
  • Manufacturer: Intersil
  • Size: 1.55 MB
Download ISL73041SEH Datasheet PDF
Intersil
ISL73041SEH
ISL73041SEH is Radiation Hardened 12V Half-Bridge GaN FET Driver manufactured by Intersil.
Features - Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU) - All screening and QCI is in accordance with MIL-PRF-38535L Class-V - Up to 20V bootstrap voltage half-bridge driver - Programmable 4.5V to 5.5V gate drive voltage - Single tri-level PWM input control - Separate source and sink driver outputs - High-side peak drive: 2A Sourcing, 4A Sinking - Low-side peak drive: 4A Sourcing, 8A Sinking - High and low side programmable dead time control - Highly matched fast propagation delay: 29ns - Full military temperature operation TA = -55°C to 125°C ambient range - TID Rad Hard Assurance (RHA) testing - LDR (≤ 10mrad(Si)/s): 75krad(Si) - SEE Characterization (see SEE report for details) - No DSEE with VDD = 20V or PHS = 13.5V at LET 86Me V- cm2/mg - No DSEE with VDD = 20V or PHS = 16.5V at LET 67Me V- cm2/mg - SEFI <10µm2 at 86Me V- cm2/mg - No Half-Bridge Shoot-Through SET at LET 86Me V- cm2/mg VBUS VFBVFB+ VREF DROOP P 2ph PWM Controller ISL73847 FLT PWM1 ISEN1+ ISEN1- ISEN2+ ISEN2PWM2 SS IMON SLOPE PWM FLT Half Bridge Driver VBUS PWM FLT Half Bridge Driver VOUT Figure 1. Typical Application Schematic: 2-Phase Controller + Bridge Driver + Ga N FETs for 12V Input, 1.0V Output, 50A DC/DC Converter R34DS0017EU0104 Rev.1.04 Jan 31, 2025 Page 1 © 2023-2025 Renesas...