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ISL73041SEH Datasheet Radiation Hardened 12v Half-bridge Gan Fet Driver

Manufacturer: Intersil (now Renesas)

Overview: ISL73041SEH Radiation Hardened 12V Half-Bridge GaN FET Driver Datasheet The ISL73041SEH is a Radiation Hardened PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON) Gallium Nitride FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a pact and robust GaN FET half-bridge driver. The ISL73041SEH can interface directly to the ISL73847SEH dual-phase PWM buck controller to create a high-efficiency point-of-load regulator to power many of the latest low voltage high current FPGA and DSP digital core rails.

Key Features

  • Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU).
  • All screening and QCI is in accordance with MIL-PRF-38535L Class-V.
  • Up to 20V bootstrap voltage half-bridge driver.
  • Programmable 4.5V to 5.5V gate drive voltage.
  • Single tri-level PWM input control.
  • Separate source and sink driver outputs.
  • High-side peak drive: 2A Sourcing, 4A Sinking.
  • Low-side peak drive: 4A Sourcing, 8A Sinking.
  • High and low side programmable de.

More Datasheets from Intersil (now Renesas)

Part Number Description
ISL73040SEH Radiation Hardened Low-Side GaN FET Driver
ISL73002SEH Radiation Hardened and SEE Hardened 12A Synchronous Buck Regulator
ISL73005SEH Radiation Hardened Dual Output 3A Synchronous Buck and LDO Regulator
ISL73006SLH 1A Point-of-Load Regulator
ISL73007SEH 3A Point-of-Load Regulator
ISL73020SEH 65A Enhancement Mode GaN Power Transistors
ISL73023SEH 60A Enhancement Mode GaN Power Transistor
ISL73024SEH 7.5A Enhancement Mode GaN Power Transistor
ISL73033SLHM Radiation Hardened Driver-GaN Power Stage
ISL73051ASEH Ultra-Low Dropout Regulator

ISL73041SEH Distributor