ISL73041SEH Description
ISL73041SEH Radiation Hardened 12V Half-Bridge GaN FET Driver Datasheet The ISL73041SEH is a Radiation Hardened PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON) Gallium Nitride FETs for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch, and strong gate drive current provide a pact and robust GaN FET half-bridge driver. The ISL73041SEH...
ISL73041SEH Key Features
- Qualified to Renesas Rad Hard QML-V Equivalent Screening and QCI Flow (R34TB0001EU)
- All screening and QCI is in accordance with MIL-PRF-38535L Class-V
- Up to 20V bootstrap voltage half-bridge driver
- Programmable 4.5V to 5.5V gate drive voltage
- Single tri-level PWM input control
- Separate source and sink driver outputs
- High-side peak drive: 2A Sourcing, 4A Sinking
- Low-side peak drive: 4A Sourcing, 8A Sinking
- High and low side programmable dead time control
- Highly matched fast propagation delay: 29ns
ISL73041SEH Applications
- High current DC/DC Point-of-Load (POL) for FPGA and DSP supply rails
- 5V or 12V input to 1V output POL regulation