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MCTA75P60E1 - 75A / 600V P-Type MOS Controlled Thyristor (MCT)

General Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate.

It is designed for use in motor controls, inverters, line switches and other power switching applications.

Key Features

  • 75A, -600V.
  • VTM = -1.3V(Maximum) at I = 75A and +150oC.
  • 2000A Surge Current Capability.
  • 2000A/µs di/dt Capability.
  • MOS Insulated Gate Control.
  • 120A Gate Turn-Off Capability at +150oC.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Semiconductor April 1999 PRO CE IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O MCTV75P60E1, MCTA75P60E1 JEDEC STYLE TO-247 5-LEAD ANODE ANODE CATHODE GATE RETURN GATE 75A, 600V P-Type MOS Controlled Thyristor (MCT) Package Features • 75A, -600V • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability • 2000A/µs di/dt Capability • MOS Insulated Gate Control • 120A Gate Turn-Off Capability at +150oC Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications.