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MCTG35P60F1 - 35A / 600V P-Type MOS Controlled Thyristor

General Description

The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate.

It is designed for use in motor controls, inverters, line switches and other power switching applications.

Key Features

  • 35A, -600V.
  • VTM = -1.3V(Maximum) at I = 35A and +150 C.
  • 800A Surge Current Capability.
  • 800A/µs di/dt Capability.
  • MOS Insulated Gate Control.
  • 50A Gate Turn-Off Capability at +150oC A K G.

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Semiconductor MCTG35P60F1 35A, 600V MOS Controlled Thyristor (MCT) Package JEDEC STYLE TO-247 o April 1999 PROC WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB Features • 35A, -600V • VTM = -1.3V(Maximum) at I = 35A and +150 C • 800A Surge Current Capability • 800A/µs di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150oC A K G Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications.