HGT1S3N60B3DS Datasheet | Intersil

HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 File Number 4414.1 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices bining the best Features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRD460. The IGBT used is TA49192. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses...