Datasheet Summary
May 1995
20A, 1000V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
Features
- 34A, 1000V
- Latch Free Operation
- Typical Fall Time 520ns
- High Input Impedance
- Low Conduction Loss
Description
The HGTG20N100D2 is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC...