Datasheet Summary
Semiconductor
HGTG20N120E2
34A, 1200V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
April 1995
Features
- 34A, 1200V
- Latch Free Operation
- Typical Fall Time
- 780ns
- High Input Impedance
- Low Conduction Loss
Description
The HGTG20N120E2 is a MOS gated, high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where...