Datasheet Summary
May 1995
24A, 600V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL)
Features
- 24A, 600V
- Latch Free Operation
- Typical Fall Time <500ns
- High Input Impedance
- Low Conduction Loss
Description
The IGBT is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses...