Datasheet Summary
HGTP10N40F1D, HGTP10N50F1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
- 10A, 400V and 500V
- Latch Free Operation
- Typical Fall Time < 1.4µs
- High Input Impedance
- Low Conduction Loss
- Anti-Parallel Diode
- tRR < 60ns
Description
The IGBT is a MOS gated high voltage switching device bining the best Features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The diode used in parallel...