Datasheet Summary
HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, HGTP10N50E1D
April 1995
10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes
Package
JEDEC TO-220AB
EMITTER COLLECTOR GATE COLLECTOR (FLANGE)
Features
- 10A, 400V and 500V
- VCE(ON): 2.5V Max.
- TFALL: 1µs, 0.5µs
- Low On-State Voltage
- Fast Switching Speeds
- High Input Impedance
- Anti-Parallel Diode
Applications
- Power Supplies
- Motor Drives
- Protective Circuits
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
Description
The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as...