Datasheet Summary
Data Sheet June 1999 File Number
4A, 100V, 0.60 Ohm, P-Channel Power MOSFET
This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17501.
Features
- 4A, 100V
- rDS(ON) = 0.60Ω
- Single Pulse Avalanche Energy Rated
- SOA is Power-Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
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