Datasheet Summary
RFD20N03, RFD20N03SM
Data Sheet July 1999 File Number
20A, 30V, 0.025 Ohm, N-Channel Power MOSFETs
The RFD20N03 and RFD20N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49235.
Features
- 20A, 30V
- rDS(ON) = 0.025Ω
- Temperature pensating PSPICE® Model
- Thermal Impedance...